The home page contains a randomly selected word cloud which will pique your curiosity and help you improve your vocabulary, while the search box allows you to find specific words easily. The dictionary definitions are stored locally, and because it's ad-free there's no need for a network connection. Dictionary is ideal for both native English speakers and English learners or people studying the English language. Self-heating effect was also observed and studied.Dictionary is a free offline English dictionary containing over 200,000 words and definitions and no ads. The negative drain-induced-barrier-lowering (DIBL). (NDR) was observed at room temperature in the MoS2 negative capacitanceįield-effect-transistors (NC-FETs) as the result of negative capacitance due to Slope and is essentially hysteresis-free. With maximum drain current of 510 m, sub-thermionic subthreshold This device exhibits excellent performance in both on- and off-states, Here, we combine these two advantages and demonstrateįor the first time a molybdenum disulfide (MoS2) 2D steep slope transistor withĪ ferroelectric hafnium zirconium oxide layer (HZO) in the gate dielectric Integration in a junctionless transistor topology, offer enhanced electrostaticĬontrol of the channel. Two-dimensional (2D) semiconductors, such as atomically thin transition metalĭichalcogenides (TMDs) due to their low dielectric constant, and ease of Promising solution to bypassing this fundamental barrier. Adding aįerroelectric negative capacitor to the gate stack of a MOSFET may offer a The lowering of the supply voltage and the overall power consumption. Transistor (MOSFET) at 60 mV/dec at room temperature and, therefore, precludes The subthreshold slope (SS) of a metal-oxide-semiconductor field-effect Download a PDF of the paper titled Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors, by Mengwei Si and 9 other authors Download PDF Abstract: The so-called Boltzmann Tyranny defines the fundamental thermionic limit of
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